项目: 1.国家自然科学基金面上项目“新型二维类CuMP2X6结构多铁材料的磁电耦合效应与界面调控”，主持。 2.国家自然科学基金面上项目“二维材料中谷与自旋自由度的耦合效应及其电磁调控”，主持。 3.国家自然科学基金青年项目“弹性应变下原子薄膜的电子结构和输运性质的理论和计算研究”，主持。 论文: 1.Wen Dang, Mengyu Zhu, Ziye Zhu, Xiaofang Chen, Zhigang Song,Jingshan Qi, Electric-Field-Tunable Spin Polarization and Carrier-Transport Anisotropy in an A-Type Antiferromagnetic van der Waals Bilayer, Physical Review Applied18(6), 064086(2022). 2.Xunkai Duan, Hua Wang, Xiaofang Chen andJingshan Qi, Multiple polarization phases and strong magnetoelectric coupling in the layered transition metal phosphorus chalcogenides TMP2X6 (T=Cu, Ag; M=Cr, V; X=S, Se) by controlling the interlayer interaction and dimension,Physical Review B,106(11), 115403(2022). 3.Dier Feng, Ziye Zhu, Xiaofang Chen andJingshan Qi, Electric-polarization-driven magnetic phase transition in a ferroelectric–ferromagnetic heterostructure,Applied Physics Letters118 (6), 062903(2021). 4.Yechen Xun, Ziye Zhu, Xiaofang Chen andJingshan Qi, One-dimensional ferromagnetic semiconductor CrSbSe3with high Curie temperature and large magnetic anisotropy,Physical Review B,104(8), 085429(2021). 5.Ziye Zhu, Xiaofang Chen, Wenbin Li andJingshan Qi,Controllable magnetism driven by carrier confinement and ferroelectric polarization in a two-dimensional heterostructure,Journal of Materials Chemistry C8(48), 17342-17348 (2020). 6.Ziye Zhu, Baiyu Zhang, Xiaofang Chen, Xiaofeng Qian andJingshan Qi, Electric Field Control of Molecular Magnetic State by Two Dimensional Ferroelectric Heterostructure Engineering,Applied Physics Letters117 (8), 08290(2020). 7.Hua Wang,Jingshan Qi, and Xiaofeng Qian.Electrically-Tunable High Curie Temperature Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals,Applied Physics Letters117(8), 083102(2020). 8.Ziye Zhu, Xiaofang Chen, Wenbin Li andJingshan Qi, Electric field control of the semiconductor-metaltransition in two dimensional CuInP2S6/germanene van der Waals heterostructure,Applied Physics Letters114(22), 223102 (2019). 9.Jingshan Qi, Kaige Hu and Xiao Li, Electric Control of the Edge Magnetization in Zigzag Stanene Nanoribbons from First Principles,Physical Review Applied10(3), 034048 (2018). 10.Jingshan Qi, Hua Wang, Xiaofang Chen, and Xiaofeng Qian.Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism.Applied Physics Letters113(4), 043102 (2018). 11.Yi-Wen Wei, Chao-Kai Li,Jingshan Qiand Ji Feng,Magnetoconductivity of type-II Weyl semimetals,Physical Review B97, 205131 (2018). 12.Liangshuai Zhong, Xiaofang Chen andJingshan Qi, Controlling the spin and valley degeneracy splitting in monolayer MnPSe3 by atom doping, Physical Chemistry Chemical Physics,19(23), 15388-15393 (2017). 13.Xiaofang Chen, Liangshuai Zhong, Xiao Li andJingshan Qi,Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption,Nanoscale9(6), 2188-2194 (2017). 14.Wenbin Li,Lei Sun,Jingshan Qi,Pablo Jarillo-Herrero,Mircea DincăandJu Li, High temperature ferromagnetism in π-conjugated two-dimensional metal–organic frameworks,Chemical Science,8(4), 2859-2867 (2017). 15.Jingshan Qi, Xiao Li, Xiaofeng Qian, Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane,Applied Physics Letters108(25), 253107 (2016). 16.Jingshan Qi，Xiaofang Chen，Kaige Hu and Ji Feng，Graphene-based half-metal and spin-semiconductor for spintronic application，Journal of Physics: Condensed Matter, 28(12),126004 (2016). 17.Sha Wu, Wengang Lu,Jingshan Qi,Spin-charge order and excitonic effects in sawtooth-like graphene nanoribbons,Physics Letters A380(38), 3092 (2016). 18.Feipeng Zheng, Chaoyi Cai, Shaofeng Ge, Xuefeng Zhang, Xin Liu, Hong Lu, Yudao Zhang, Jun Qiu, Takashi Taniguchi, Kenji Watanabe, Shuang Jia,Jingshan Qi, Jian-Hao Chen, Dong Sun, and Ji Feng, On the Quantum Spin Hall Gap of Monolayer 1T′-WTe2,Advanced Materials, 28,4845-4851(2016). 19.Jingshan Qi,Xiao Li, Qian Niu and Ji Feng,Giant and tunable valley degeneracy splitting in MoTe2,Physical Review B,92(12), 121403(2015). 20.Xiaofang Chen,Jingshan Qiand Daning Shi, Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe3: competition of direct exchange interaction and superexchange interaction,Physics Letters A,379(1),60 (2015). 21.Baisheng Sa, Yanling Li, Zhimei Sun,Jingshan Qi, Cuilian Wen and Bo Wu,The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene,Nanotechnology,26(21), 215205 (2015). 22.Jingshan Qi, Xiao Li, Xiaofang Chen and Kaige Hu, Strain tuning of magnetism in Mn doped MoS2 monolayer,Journal of Physics: Condensed Matter,26(25), 256003 (2014). 23.Baisheng Sa, Yan-Ling Li,Jingshan Qi, Rajeev Ahuja, Zhimei Sun,Strain engineering for phosphorene: the potential application as a photocatalyst,The Journal of Physical Chemistry C,118(46), 26560-26568 (2014). 24.Jingshan Qi,Xiao Li, Xiaofeng Qian,and Ji Feng, Bandgap engineering of rippled MoS2 monolayer under external electric field,Applied Physics Letters,102(17), 173112 (2013). 25.Jingshan Qi,Xiaofeng Qian, Liang Qi, Ji Feng, Daning Shi and Ju Li, Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons,Nano Letters,12(3), 1224-1228 (2012). 26.Ji Feng, Wenbin Li, Xiaofeng Qian,Jingshan Qi, Liang Qi and Ju Li, Patterning of graphene,Nanoscale,4(16), 4883-4899 (2012). 27.Jingshan Qi,Jianyu Huang, Ji Feng, Daning Shi and Ju Li, The Possibility of Chemically Inert, Graphene-Based All-carbon Electronic Devices with 0.8 eV Gap,ACS Nano,5(5), 3475-3482 (2011). 28.Hongxia Chen, Daning Shi andJingshan Qi, Comparative Studies on The Magnetic Properties of ZnS Nanowires Doped with Transition Metal Atoms,Journal of Applied Physics,109(8), 084338 (2011). 29.Caixia Kan, Changshun Wang, Hongchen Li,Jingshan Qi, Jiejun Zhu, Zhaosheng Li and Daning Shi, Gold microplates with well-defined shapes,Small,6, 1768-1775 (2010). 30.Jingshan Qi, Hailin Yu, Xufan Jiang and Daning Shi, First principles study of Electronic Strucutre and Magnetic Properties of Half-Metallic Full-Heusler Alloys Co2MnSi and Co2FeSi,International Journal of Modern Physics B,24(8), 967-978 (2010). 31.Jingshan Qi, Daning Shi, Hongxia Chen and Baolin Wang,Stuctures and Electronic Properties of The Bi-Sb Superlattice Nanowires and Core-Shell Structural Bi/Bb Nanowires,The Journal of Physical Chemistry C,113(26), 11358-11365 (2009). 32.Jingshan Qi, Daning Shi, Baolin Wang, Different Mechanical Properties of The Pristine and Hydrogen Passivated ZnO Nanowires,Computational Materials Science,46(2), 303-306 (2009). 33.Jingshan Qi, Daning Shi and Jianming Jia,First-Principles Studies of The Electronic and Mechanical Properties of ZnO Nanobelts with Different Dominant Surfaces,Nanotechnology,19(43), 435707 (2008). 34.Jingshan Qi, Daning Shi, Jijun Zhao and Xuefan Jiang, Stable Structures and Electronic Properties of The Oriented Bi Nanowires and Nanotubes from First-Principle Calculations,The Journal of Physical Chemistry C,112(29), 10745-10753 (2008). 35.Jingshan Qi, Daning Shi and Xuefan Jiang,The Structures and Electronic Properties of Double-Wall Bismuth Nanotubes from First-Principle Calculations,Chemical Physics Letters,460(1-3), 266-271 (2008). |